View BLF6G27-10G_5999217.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1. product profile 1.1 general description 10 w ldmos power transistor for base station applications at frequencies from 2300 mhz to 2400 mhz and 2500 mhz to 2700 mhz. [1] single carrier n-cdma with pilot, paging sy nc and 6 traffic channels (walsh codes 8 - 13). par = 9.7 db at 0.01 % probability on ccdf. channel bandwidth is 1.23 mhz. [2] measured within 30 khz bandwidth. 1.2 features and benefits ? typical 1-carrier n-cdma performance (si ngle carrier n-cdma with pilot, paging, sync and 6 traffic channels [walsh codes 8 - 13]. par = 9.7 db at 0.01 % probability on ccdf. channel bandwidth is 1.23 mhz), a supply voltage of 28 v and an i dq of 130 ma: ? qualified up to a maximum v ds operation of 32 v ? integrated esd protection ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation ? internally matched for ease of use ? low gold plating thickness on leads ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for base stations and multi carrier a pplications in the 2300 mhz to 2400 mhz and 2500 mhz to 2700 mhz frequency range. blf6g27-10; BLF6G27-10G wimax power ldmos transistor rev. 3 ? 28 february 2011 product data sheet table 1. typical performance rf performance at t case = 25 c in a class-ab production test circuit. mode of operation f v ds p l(av) g p d acpr 885k acpr 1980k (mhz) (v) (w) (db) (%) (dbc) (dbc) 1-carrier n-cdma [1] 2500 to 2700 28 2 19 20 ? 49 [2] ? 64 [2] is-95 2300 to 2400 28 2 22.5 24.8 ? 47 [2] ? 64 [2]
blf6g27-10_BLF6G27-10G all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 3 ? 28 february 2011 2 of 15 nxp semiconductors blf6g27-10; BLF6G27-10G wimax power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol blf6g27-10 (sot975b) 1drain 2gate 3source [1] BLF6G27-10G (sot975c) 1drain 2gate 3source [1] 1 2 sym11 2 1 3 2 1 2 sym11 2 1 3 2 table 3. ordering information type number package name description version blf6g27-10 - earless flanged ceramic package; 2 leads sot975b BLF6G27-10G - earless flanged ceramic package; 2 leads sot975c table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v i d drain current - 3.5 a t stg storage temperature ? 65 +150 c t j junction temperature - 225 c
blf6g27-10_BLF6G27-10G all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 3 ? 28 february 2011 3 of 15 nxp semiconductors blf6g27-10; BLF6G27-10G wimax power ldmos transistor 5. thermal characteristics 6. characteristics 7. application information [1] measured within 30 khz bandwidth. 7.1 ruggedness in class-ab operation the blf6g27-10 and BLF6G27-10G are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq =130ma; p l = p l(1db) ; f = 2700 mhz. table 5. thermal characteristics symbol parameter conditions type typ unit r th(j-case) thermal resistance from junction to case t case =80 c; p l = 10 w (cw) blf6g27-10 4.0 k/w BLF6G27-10G 4.0 k/w table 6. characteristics t j = 25 c per section; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =0.18ma65--v v gs(th) gate-source threshold voltage v ds =10 v; i d =18ma 1.4 1.9 2.4 v i dss drain leakage current v gs =0v; v ds =28v--1.4 a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v 2.7--a i gss gate leakage current v gs =11v; v ds = 0 v - - 140 na g fs forward transconductance v ds =10v; i d = 0.9 a 0.8 - - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =0.6a 328 - 1256 m c rs feedback capacitance v gs =0v; v ds =28v; f=1mhz -3.6-pf table 7. application information mode of operation: single carrier n-cdma with pi lot, paging, sync and 6 traffic channels (walsh codes 8 - 13). par 9.7 db at 0.01 % probabi lity on ccdf; channel bandwidth is 1.23 mhz; f 1 = 2500 mhz; f 2 = 2600 mhz; f 3 = 2700 mhz; rf performance at v ds = 28 v; i dq = 130 ma; t case =25 c; unless otherwise specified; in a class-ab production circuit. symbol parameter conditions min typ max unit p l(av) average output power - 2 - w g p power gain p l(av) = 2 w 17.5 19 - db rl in input return loss p l(av) =2w - ? 10 - db d drain efficiency p l(av) =2w 18 20 - % acpr 885k adjacent channel power ratio (885 khz) p l(av) =2w [1] - ? 49 ? 46 dbc acpr 1980k adjacent channel power ratio (1980 khz) p l(av) =2w [1] - ? 64 ? 61 dbc
blf6g27-10_BLF6G27-10G all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 3 ? 28 february 2011 4 of 15 nxp semiconductors blf6g27-10; BLF6G27-10G wimax power ldmos transistor 7.2 nxp wimax signal 7.2.1 wimax signal description frame duration = 5 ms; bandwidth = 10 mhz; sequency = 1 frame; frequency band = wcs; sampling rate = 11.2 mhz; n = 8 / 7; g = t g / t b = 1 / 8; fft = 1024; zone type = pusc; = 97.7 %; number of symbols = 46; number of subchannels = 30; par = 9.5 db. preamble: 1 symbol 30 subchannels; p l = p l(nom) + 3.86 db. 7.2.2 graphs table 8. frame structure frame contents modulation technique data length zone 0 fch 2 symbols 4 subchannels qpsk1/2 3 bit zone 0 data 2 symbols 26 subchannels 64qam3/4 692 bit zone 0 data 44 symbols 30 subchannels 64qam3/4 10000 bit v ds =28v; i dq = 130 ma; f = 2600 mhz. v ds =28v; i dq = 130 ma; f = 2600 mhz. fig 1. evm as a function of load power; typical values fig 2. power gain and drain efficiency as function of average load power; typical values p l (w) 10 ? 1 10 1 001aaj351 8 4 12 16 evm (%) 0 001aaj352 19 21 17 23 25 g p (db) g p d (%) 15 20 30 10 40 50 0 p l(av) (w) 10 ? 1 10 1 d
blf6g27-10_BLF6G27-10G all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 3 ? 28 february 2011 5 of 15 nxp semiconductors blf6g27-10; BLF6G27-10G wimax power ldmos transistor 7.3 single carrier na is-95 broadband performance at 2 w average 7.3.1 graphs v ds =28v; i dq = 130 ma; f = 2600 mhz. fig 3. adjacent channel power ratio as a function of average load power; typical values p l(av) (w) 10 ? 1 10 1 001aaj353 ? 40 ? 50 ? 30 ? 20 acpr (dbc) ? 60 acpr 10m acpr 20m acpr 30m v ds =28v; i dq = 130 ma; single carrier is-95; par = 9.7 db at 0.01 % probability. v ds =28v; i dq = 130 ma; single carrier is-95; par = 9.7 db at .01 % probability. (1) low frequency component (2) high frequency component fig 4. power gain and drain efficiency as function of frequency; typical values fig 5. adjacent channel power ratio as a function of frequency; typical values f (mhz) 2500 2700 2660 2580 2620 2540 001aaj354 19 21 17 23 25 g p (db) 15 d (%) 20 21 19 22 23 18 d g p f (mhz) 2500 2700 2660 2580 2620 2540 001aaj355 ? 60 ? 55 ? 65 ? 50 ? 45 acpr (dbc) ? 70 acpr 885k acpr 1500k acpr 1980k (2) (1) (1) (2) (2) (1)
blf6g27-10_BLF6G27-10G all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 3 ? 28 february 2011 6 of 15 nxp semiconductors blf6g27-10; BLF6G27-10G wimax power ldmos transistor v ds =28v; i dq = 130 ma; f = 2600 mhz; single carrier is-95; par = 9.7 db at 0.01 % probability; channel bandwidth = 1.23 mhz. v ds =28v; i dq = 130 ma; f = 2600 mhz; single carrier is-95; par = 9.7 db at 0.01 % probability; channel bandwidth = 1.23 mhz; ibw = 30 khz. (1) low frequency component (2) high frequency component fig 6. power gain and drain efficiency as function of load power; typical values fig 7. adjacent channel power ratio as a function of load power; typical values 001aaj356 18 20 16 22 24 g p (db) g p d (%) 14 20 30 10 40 50 0 p l(av) (w) 10 ? 1 10 1 d p l(av) (w) 10 ? 1 10 1 001aaj357 ? 55 ? 65 ? 45 ? 35 acpr (dbc) ? 75 acpr 885k acpr 1500k acpr 1980k (2) (1) (1) (2) (2) (1) v ds =28v; i dq = 130 ma; single carrier is-95; par = 9.7 db at 0.01 % probability; channel bandwidth = 1.23 mhz. (1) f = 2500 mhz (2) f = 2600 mhz (3) f = 2700 mhz v ds =28v; i dq = 130 ma; single carrier is-95; par = 9.7 db at 0.01 % probability; channel bandwidth = 1.23 mhz. (1) f = 2500 mhz (2) f = 2600 mhz (3) f = 2700 mhz fig 8. power gain as a function of load power; typical values fig 9. input power as a function of load power; typical values 001aaj358 19 21 17 23 25 g p (db) 15 p l (w) 10 ? 1 10 1 (2) (1) (3) p l (w) 10 ? 1 10 1 001aaj359 0.08 0.04 0.12 0.16 p i (w) 0 (3) (2) (1)
blf6g27-10_BLF6G27-10G all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 3 ? 28 february 2011 7 of 15 nxp semiconductors blf6g27-10; BLF6G27-10G wimax power ldmos transistor 8. test information striplines are on a double copper-clad taconi c rf35 printed-circuit board (pcb) with r = 3.5 and thickness = 0.76 mm. see table 9 for list of components. fig 10. component layout for 2500 mhz to 2700 mhz test circuit blf6g27-10 001aaj36 0 blf6g27-10 output rev 2 nxp blf6g27-10 input rev 2 nxp c2 c1 c4 c5 c6 r2 c8 l1 c7 pcb2 pcb1 c3 r1
blf6g27-10_BLF6G27-10G all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 3 ? 28 february 2011 8 of 15 nxp semiconductors blf6g27-10; BLF6G27-10G wimax power ldmos transistor striplines are on a double copper-clad taconi c rf35 printed-circuit board (pcb) with r = 3.5 and thickness = 0.76 mm. see table 9 for list of components. fig 11. component layout for 2500 mhz to 2700 mhz test circuit BLF6G27-10G table 9. list of components for test circuit, see figure 10 and figure 11 . component description value remarks c1, c3, c5, c7 multilayer ceramic chip capacitor 22 pf atc 100a c2 multilayer ceramic chip capacitor 1.5 ftdk c4 multilayer ceramic chip capacitor 1.6 pf atc 100a c6 multilayer ceramic chip capacitor 10 f; 50 v tdk c8 electrolytic capacitor 220 f; 63 v elco l1 ferrite smd bead - ferroxcube bead r1, r2 smd resistor 8.2 thin film 001aaj36 1 BLF6G27-10G output rev 1 nxp BLF6G27-10G input rev 1 nxp c2 c1 c4 c5 c6 r2 c8 l1 c7 pcb2 pcb1 c3 r1
blf6g27-10_BLF6G27-10G all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 3 ? 28 february 2011 9 of 15 nxp semiconductors blf6g27-10; BLF6G27-10G wimax power ldmos transistor table 10. measured test circuit impedances f z i z o (ghz) ( ) ( ) blf6g27-10 2.50 5.32 ? j8.61 9.46 ? j6.99 2.55 4.85 ? j8.09 9.44 ? j7.41 2.60 4.40 ? j7.55 9.32 ? j7.86 2.65 3.98 ? j7.00 9.10 ? j8.31 2.70 3.59 ? j6.43 8.77 ? j8.75 BLF6G27-10G 2.50 5.67 ? j13.62 10.70 ? j7.38 2.55 5.06 ? j12.79 10.61 ? j8.00 2.60 4.55 ? j11.98 10.38 ? j8.63 2.65 4.10 ? j11.19 10.00 ? j9.24 2.70 3.71 ? j10.43 9.49 ? j9.79
blf6g27-10_BLF6G27-10G all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 3 ? 28 february 2011 10 of 15 nxp semiconductors blf6g27-10; BLF6G27-10G wimax power ldmos transistor 9. package outline fig 12. package outline sot975b references outline version european projection issue date iec jedec jeita sot975b sot975 b 06-11-03 07-09-28 unit a mm 3.63 3.05 3.38 3.23 0.23 0.18 6.93 6.78 6.55 6.40 6.93 6.78 0.23 0.18 0.76 0.66 6.43 6.27 0.51 b dimensions (millimetre dimensions are derived from the original inch dimensions) e arless flanged ceramic package; 2 leads a 0 5 10 mm scale c d 6.55 6.40 d 1 e e 1 f h 11.05 10.80 q u 1 u 2 6.43 6.27 w 1 inches 0.143 0.120 0.133 0.127 0.009 0.007 0.273 0.267 0.258 0.252 0.273 0.267 0.009 0.007 0.030 0.026 0.253 0.247 0.02 0.258 0.252 0.435 0.425 0.253 0.247 b h q c e e 1 u 2 d a f d 1 u 1 1 2 a m w 1 m
blf6g27-10_BLF6G27-10G all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 3 ? 28 february 2011 11 of 15 nxp semiconductors blf6g27-10; BLF6G27-10G wimax power ldmos transistor fig 13. package outline sot975c references outline version european projection issue date iec jedec jeita sot975c sot975 c unit a mm 3.63 3.05 3.38 3.23 0.23 0.18 6.93 6.78 6.55 6.40 6.93 6.78 0.23 0.18 1.65 1.02 0.51 6.43 6.27 b dimensions (millimetre dimensions are derived from the original inch dimensions) e arless flanged ceramic package; 2 leads a 0 5 10 mm scale c d 6.55 6.40 d 1 e e 1 f h 10.29 10.03 l l p q +0.05 ? 0.05 u 1 inches 0.143 0.120 0.133 0.127 0.009 0.007 0.273 0.267 0.258 0.252 0.273 0.267 0.009 0.007 0.065 0.040 0.020 0.253 0.247 0.258 0.252 0.405 0.395 +0.002 ? 0.002 6.43 6.27 0.51 u 2 w 1 7 0 0.253 0.247 0.020 7 0 d a f d 1 u 1 b h 1 2 a m w 1 m q c e e 1 u 2 l p l 08-05-20 08-07-10
blf6g27-10_BLF6G27-10G all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 3 ? 28 february 2011 12 of 15 nxp semiconductors blf6g27-10; BLF6G27-10G wimax power ldmos transistor 10. abbreviations 11. revision history table 11. abbreviations acronym description ccdf complementary cumulative distribution function cw continuous wave evm error vector magnitude fch frame control header fft fast fourier transform ibw instantaneous bandwidth is-95 interim standard 95 ldmos laterally diffused metal-oxide semiconductor na north american n-cdma narrowband code division multiple access par peak-to-average power ratio pusc partial usage of subchannels rf radio frequency smd surface mounted device vswr voltage standing-wave ratio wcs wireless communications service wimax worldwide interoperability for microwave access table 12. revision history document id release date data sheet status change notice supersedes blf6g27-10_BLF6G27-10G v.3 20110228 product data sheet - blf6g27-10_BLF6G27-10G v.2 modifications: ? section 1.1 on page 1 : added ? 2300 mhz to 2400 mhz? ? table 1 on page 1 : added ?is-95? row to table ? on page 1: removed caution remark esd ? section 1.3 on page 1 : added ? 2300 mhz to 2400 mhz? blf6g27-10_BLF6G27-10G v.2 20101202 product data sheet - blf6g27-10_BLF6G27-10G v.1 blf6g27-10_BLF6G27-10G v.1 20090204 product data sheet - -
blf6g27-10_BLF6G27-10G all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 3 ? 28 february 2011 13 of 15 nxp semiconductors blf6g27-10; BLF6G27-10G wimax power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
blf6g27-10_BLF6G27-10G all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 3 ? 28 february 2011 14 of 15 nxp semiconductors blf6g27-10; BLF6G27-10G wimax power ldmos transistor non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive s pecifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors blf6g27-10; BLF6G27-10G wimax power ldmos transistor ? nxp b.v. 2011. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 28 february 2011 document identifier: blf6g27-10_BLF6G27-10G please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation . . . . . . . . . 3 7.2 nxp wimax signal . . . . . . . . . . . . . . . . . . . . . . 4 7.2.1 wimax signal description . . . . . . . . . . . . . . . . . 4 7.2.2 graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.3 single carrier na is-95 broadband performance at 2 w average . . . . . . . . . . . . . . 5 7.3.1 graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 13 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13 contact information. . . . . . . . . . . . . . . . . . . . . 14 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

▲Up To Search▲

Price & Availability of BLF6G27-10G

	To Download BLF6G27-10G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .